Aluminium oxide wafers |
Aluminium oxide wafers
AOS 220
- thermal resistance:0.3 K/W [at 1 inch2; = 6.45 cm2; = TO 3 (AOS 3 G)]
- dielectric strength:10 kV/mm
for transistor: | TO 220
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material: | AL2O3 - ceramics
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thickness: | 1.5 mm
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specific electrical resistance: | >1014 Ω/cm
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thermal conductivity: | 25 W/m·K
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dielectric constant: | 9
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linear expansion coefficient: | ~8·10-6/K
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flatness: | 0.02 mm
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thermal resistance: | 0.3 K/W [at 1 inch2; = 6.45 cm2; = TO 3 (AOS 3 G)]
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dielectric strength: | 10 kV/mm
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FRI 7:30 - 15:15